收藏本站
NTUD3128N
Small Signal MOSFET
20 V, 200 mA, Dual N-Channel, 1.0 mm x
1.0 mm SOT-963 Package
Features
? Dual N-Channel MOSFET
? Offers a Low R DS(ON) Solution in the Ultra Small 1.0 x 1.0 mm
Package
? 1.5 V Gate Voltage Rating
? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics
? These are Pb-Free Devices
Applications
? General Purpose Interfacing Switch
? Optimized for Power Management in Ultra Portable Equipment
V (BR)DSS
20 V
G1
http://onsemi.com
R DS(ON) MAX
3.0 W @ 4.5 V
4.0 W @ 2.5 V
6.0 W @ 1.8 V
10 W @ 1.5 V
D1
G2
I D Max
0.2 A
D2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Value
Unit
N-Channel
Drain-to-Source Voltage
V DSS
20
V
S1
MOSFET
S2
Gate-to-Source Voltage
V GS
± 8
V
Continuous Drain
Current (Note 1)
Steady
State
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
160
115
200
mA
S 1 1
PINOUT: SOT-963
6 D 1
Power Dissipation
Steady
125
(Note 1)
State
t v 5s
T A = 25 ° C
P D
200
mW
G 1 2
5 G 2
Pulsed Drain Current
t p = 10 m s
I DM
800
mA
Operating Junction and Storage Temperature
T J ,
-55 to
° C
Source Current (Body Diode) (Note 2)
T STG
I S
150
200
mA
D 2
3
4 S 2
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
Top View
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING
DIAGRAM
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%
SOT-963
CASE 527AA
1
NM G
N
M
G
= Specific Device Code
= Date Code
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 0
1
Publication Order Number:
NTUD3127C/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTUD3129PT5G MOSFET P-CH DUAL 20V SOT-963
NTUD3169CZT5G MOSFET N/P-CH 20V SOT-963
NTUD3170NZT5G MOSFET N-CH DUAL 20V SOT-963
NTUD3171PZT5G MOSFET P-CH DUAL 20V SOT-963
NTY100N10G MOSFET N-CH 100V 123A TO-264
NTZD3152PT5G MOSFET P-CHAN DUAL 20V SOT-563
NTZD3154NT5G MOSFET N-CHAN DUAL 20V SOT-563
NTZD3155CT2G MOSFET N/P-CH COMPL 20V SOT-563
相关代理商/技术参数
NTUD3129P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
NTUD3129PT5G 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD3169CZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package
NTUD3169CZT5G 功能描述:MOSFET 20V Mosfet Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD3170NZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package
NTUD3170NZT5G 功能描述:MOSFET 20V Trench N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD3171PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −200 mA, Dual P−Channel, 1.0 x 1.0 mm SOT−963 Package
NTUD3171PZT5G 功能描述:MOSFET 20V Trench P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube